Nanometrics presents the QS-1200 desktop system for dopant monitoring, epi thickness measurement. and other applications.The QS-1200 is designed for advanced semiconductor fabs performing material characterization in silicon growing and device manufacturing areas. It provides a new level of integration of the FTIR technique utilizing proven optical technology, and a manual wafer tray to accommodate SEMI standard wafer sizes of 100, 125, 150, 200, and 300 mm. Odd shaped wafer pieces,and 2 mm thick silicon slices can also be used on the QS-1200. An Elvailable option is a single wafer mapping (r, theta) stage for all the above wafer sizes.
Typical Applications
Epitaxial film thickness
Film thickness (dielectric, wafer, MEMs)
Interstitial oxygen and substitutional carbon in silicon
Boron and phosphorus in BPSG
Hydrogen in SiN and SiON passivation layer
Fluorine in FSG layers
General purpose FTIR analysis
Contact Nanometrics for detailed list of applications
System Description
Non-contact and non-destructive FTIR technique for a large number of applications using Nanometrics' proven FTIR technology and proprietary algorithms
High sensitivity ensured by large optical aperture, self-aligning interferometer and related optics
QS-1200 PC system is fully GEM compliant and the SECS interface supports local and remote control operation by the host via HSMS/SECS-1 protocols
Transmission and reflection measurements
Unlimited measurement pattern and 20/30 mapping
Faster installation and qualification
Easy recipe transfer
System Performance
Uptime：>98%
MTBF：>2,000 hours
MTBA：>1,000 hours
MTTR：<4 hours
Available applications:
EPI/MEM EPI/Hetero EPI/Quantum EPI
BPSG
CO
FSG
HSQ
FimZ
SICN
SI-N/-OC/-ON
Oxygen Dose/Precipitate
Available configuration options:
200/300mm manual sample holders (incl. 2”, 3”, 4” 5” and 6”templates
200/300mm auto mapper (incl. 2”, 3”, 4” 5” and 6” templates
purged wafer compartment
Dual detector options MCT & DTGS
External beam option
System Measurement
Application | Range | Precision | Accuracy | |
Epitaxial Thickness | [Si/Si]： | 0.1-200μm | ＜0.01μm | N/A |
Bulk Impurities | [Oi]： [Cs]： | 3-40ppma 0.1-10ppma | 0.1 ppma 0.05 ppma | 0.2 ppma 0.1 ppma |
Dopant Composition | [B]： [P]： [F]： | 1-7Wt% 2-12 Wt% 1-10 Wt% | 0.05 Wt% 0.05 Wt% 0.05 Wt% | 0.15 Wt% 0.25 Wt% 0.15 Wt% |
Hydrogen in Passivation Layers | [Si-H]： [N-H]： | 3-30Atom% 3-30 Atom% | 0.3 Atom% 0.3 Atom% | 0.5 Atom% 0.5 Atom% |
